III-Nitride Transistors for Millimeter-Wave and Beyond Applications

In the last three decades, nitride-based semiconductor technology has made significant progress because of the modern semiconductor material growth technology and availability of fine-line lithography tools that allow patterning of nanoscale critical dimensions.

In particular, III-nitride high electron mobility transistors (HEMTs) are more attractive than GaAs and InP technologies for building RF power amplifiers because of their improved maximum output power, potentially up to 300 GHz [1]. In this research, we use electro-thermal modeling and simulation techniques to provide device design solutions to overcome the performance bottlenecks in state-of-the-art III-nitride HEMTs. Additionally, we are building physically motivated compact I-V models of III-nitride HEMTs that are scalable all the way from diffusive to the ballistic transport regimes [2-5].

We have also built models for III-V (InGaAs, GaAs) HEMTs and extremely-thin silicon-oninsulator (ETSOI) technologies that are open source on nanoHUB [6-8]. The models are the second most downloaded models on nanoHUB and used by researchers to test drive new technologies and examine the usability of new device options.

RESEARCH PAPERS


CitationView PapersResearch AreasDate

Y. Wang, Z. Jiao, Q. Yao, L.M. Balescu, Q. Liu, B. Tang, H.J.W. Zandvliet, “Structural and electronic properties of the α-GeSe surface,” Surface science 686, 17-21, Aug. 2019

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mobile edge, quantum devicesAugust 1, 2019

R Li, X Zhang, L Miao, L Stewart, E Kotta, D Qian, D. Shahrjerdi, “Second derivative analysis and alternative data filters for multi-dimensional spectroscopies: a Fourier-space perspective,” Journal of Electron Spectroscopy and Related Phenomena, June 2019

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quantum devicesJune 23, 2019

A. Manickam1, K.D. You, N. Wood, L. Pei, Y. Liu, D. Shahrjerdi, “11.2 A CMOS Biosensor Array with 1024 3-Electrode Voltammetry Pixels and 93dB Dynamic Range,” IEEE International Solid- State Circuits Conference – (ISSCC), Feb. 2019

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quantum devicesFebruary 14, 2019

D. Shahrjerdi, A. Manickam, K.D. You, N. Wood, L. Pei, Y. Liu, R. Singh, N. Gamini, “11.2 A CMOS Biosensor Array with 1024 3-Electrode Voltammetry Pixels and 93dB Dynamic Range,” 2019 IEEE International Solid-State Circuits Conference-(ISSCC), Feb 2019

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quantum devicesFebruary 12, 2019

T. Wu, A. Alharbi, R. Kiani, D. Shahrjerdi, “Graphene Electrodes: Quantitative Principles for Precise Engineering of Sensitivity in Graphene Electrochemical Sensors,” Advanced Materials, Feb 2019

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quantum devicesFebruary 1, 2019

Jeff Jun Zhang, Siddharth Garg, “FATE: fast and accurate timing error prediction framework for low power DNN accelerator design,” ICCAD 2018: 24

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Lower Power ADCsNovember 5, 2018

Jeff Zhang, Kartheek Rangineni, Zahra Ghodsi, Siddharth Garg, “Thundervolt: enabling aggressive voltage underscaling and timing error resilience for energy efficient deep learning accelerators,” DAC 2018: 19:1-19:6

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Lower Power ADCsJune 18, 2018

S. Sun, T.S. Rappaport, M. Shafi, P. Tang, J. Zhang, P. J. Smith, “Propagation Models and Performance Evaluation for 5G Millimeter-Wave Bands,” in IEEE Transactions on Vehicular Technology, June 2018.

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mmwave rappaport, quantum devices, terahertzJune 1, 2018

Jeff Jun Zhang, Tianyu Gu, Kanad Basu, Siddharth Garg, “Analyzing and mitigating the impact of permanent faults on a systolic array based neural network accelerator,” VTS 2018: 1-6

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Lower Power ADCsApril 22, 2018

V. Petrov, D. Moltchanov, M. Komar, A. Antonov, P. Kustarev, S. Rakheja, and Y.
Koucheryavy. “Terahertz Band Intra-Chip Communications: Can Wireless Links Scale Modern
x86 CPUs?” Accepted for publication in IEEE ACCESS. doi: 10.1109/ACCESS.2017.2689077.

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iii-nitride, quantum devicesApril 11, 2017

R. Pujari, S. Rakheja “Performance Evaluation of Copper and Graphene Nanoribbon in 2D Network-On-Chip Structures,” In The 18th International Symposium on Quality Electronic Design (ISQED), Santa Clara, California, March 13 – 15, 2017.

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quantum devicesMarch 13, 2017

S. Rakheja “Communication Limits of On-Chip Graphene Plasmonic Interconnects” In The 18th International Symposium on Quality Electronic Design (ISQED), Santa Clara, California, March 13 – 15, 2017.

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quantum devicesMarch 13, 2017

K. Li, S. Rakheja. Optimal III-nitride HEMTs: From Materials and Device Design to Compact Model of the 2DEG Charge Density. In SPIE Proceedings: Gallium Nitride Materials and Devices XII, vol. 10104, p. 1010418-1 – 1010418-16, Feb. 2017.

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iii-nitride, quantum devicesFebruary 1, 2017

S. Farzaneh, S. Rakheja “Plasmon Propagation in Gated Bilayer Graphene” In The International Society for Optics and Photonics (SPIE) – Photonics West, San Francisco, California, Jan. 28 – Feb. 02, 2017.

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quantum devicesJanuary 28, 2017

S. Rakheja. On the Gaussian Pulse Propagation Through Multilayer Graphene Plasmonic Waveguides – Impact of Electrostatic Screening and Frequency Dispersion on Group Velocity and Pulse Distortion. IEEE Transactions on NanoTechnology, vol. 15, no. 6, pp. 936–946, Nov. 2016.

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quantum devicesNovember 1, 2016

S. Rakheja, P. Sengupta, K. Li. Challenges and Opportunities in Modeling Gallium Nitride High Electron Mobility Transistors – From Numerical Simulations to Compact Transistor Model. In International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, Oct. 02 07, 2016.

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iii-nitrideOctober 2, 2016

S. Rakheja and D. Antoniadis. MIT MVS Models.

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iii-nitrideApril 11, 2016

S. Rakheja and P. Sengupta “The Tuning of Light-Matter Coupling and Dichroism in Graphene for Enhanced Absorption: Implications for Graphene-based Optical Absorption Devices” Journal of Physics D: Applied Physics, vol. 49, no. 11, p. 115106, 2016.

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quantum devicesJanuary 24, 2016

S.Rakheja and P. Sengupta “Gate-Voltage Tunability of Plasmons in Single-layer Graphene Structures – Analytical Description, Impact of Interface States, and Concepts for Terahertz Devices” IEEE Transactions on Nanotechnology, vol. 15, no. 1, pp. 113-121, Jan. 2016.

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quantum devicesJanuary 1, 2016

S. Rakheja and D.A. Antoniadis, “Physics-based Compact Modeling of Charge Transport in Nanoscale Electronic Devices,” In IEEE Electron Devices Meeting (IEDM), Washington D.C., Dec. 07 – 12, 2015.

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iii-nitrideDecember 7, 2015

S. Rakheja and P. Sengupta “Design of Graphene-based Optical Modulators via Tuning of Surface Plasmon Resonance and Dielectric Constants” In Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 29 – Dec. 04, 2015.

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quantum devicesNovember 29, 2015

S.Rakheja, M. Lundstrom, and D. Antoniadis. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors – Part II: Experimental Verification. IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 2794–2801, Sep. 2015.

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iii-nitrideSeptember 1, 2015

S.Rakheja, M.Lundstrom, and D.Antoniadis. An Improved Virtual-Source-Based Transport Model For Quasi-Ballistic Transistors – Part I: Capturing Effects of Carrier Degeneracy, Drain- Bias Dependence of Gate Capacitance, and Non-Linear Channel-Access Resistance. IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 2786–2793, Sep. 2015.

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iii-nitrideSeptember 1, 2015

S. Rakheja, “Fundamental Limits of Energy Dissipation in Spintronic Interconnects Using Optical Spin Pumping,” NANOARCH, July 8-10, 2015.

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Next Generation ElectronicsJuly 8, 2015

V. Kumar, S. Rakheja, A. Naeemi “High-Frequency Models for Multilayer Graphene Interconnects,” In International Microwave Symposium (IMS), Phoenix, Arizona, May 17 – 22, 2015.

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quantum devicesMay 17, 2015

O. Orhan, E. Erkip, S. Rangan, “Low Power Analog-to-Digital Conversion in Millimeter Wave Systems: Impact of Resolution and Bandwidth on Performance” Proc. Information Theory and Applications Workshop (ITA), Proc. ITA, San Diego, Feb. 2015.

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Low-Power Fully Digital Transceivers, mmwaveFebruary 1, 2015

S. Rakheja, M. Lundstrom, and D.A. Antoniadis. A Physics-Based Compact Model for FETs from Diffusive to Ballistic Carrier Transport regimes. In IEEE Electron Devices Meeting (IEDM), San Francisco, California, Dec. 15 – 17, 2014.

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iii-nitrideDecember 15, 2014

C. N. Barati, S. A. Hosseini, S. Rangan, P. Liu, T. Korakis, S. S. Panwar, and T. S. Rappaport, “Directional Cell Search for Millimeter Wave Cellular Systems,” Proc. IEEE Signal Processing Advances in Wireless Communications (SPAWC), Toronto, Canada, pp. 120-124, June 2014.

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Low-Power Fully Digital Transceivers, Network Design, terahertz, testbedsJune 22, 2014

P. Bonhomme, S. Manipatruni, R. Mousavi, S. Rakheja, D.E. Nikonov, I.A. Young, A. Naeemi, “Circuit simulation of magnetization dynamics and spin transport,” IEEE Transactions on Electron Devices, vol. 61, no. 5, May 2014.

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Next Generation ElectronicsMarch 28, 2014

S. Rakheja, A. Naeemi, “Communicating novel computational state variables in post-CMOS logic,” IEEE Nanotechnology Magazine, vol. 7, no. 1, 2013.

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Next Generation ElectronicsFebruary 5, 2013