III-Nitride Transistors for Millimeter-Wave and Beyond Applications

In the last three decades, nitride-based semiconductor technology has made significant progress because of the modern semiconductor material growth technology and availability of fine-line lithography tools that allow patterning of nanoscale critical dimensions.

In particular, III-nitride high electron mobility transistors (HEMTs) are more attractive than GaAs and InP technologies for building RF power amplifiers because of their improved maximum output power, potentially up to 300 GHz [1]. In this research, we use electro-thermal modeling and simulation techniques to provide device design solutions to overcome the performance bottlenecks in state-of-the-art III-nitride HEMTs. Additionally, we are building physically motivated compact I-V models of III-nitride HEMTs that are scalable all the way from diffusive to the ballistic transport regimes [2-5].

We have also built models for III-V (InGaAs, GaAs) HEMTs and extremely-thin silicon-oninsulator (ETSOI) technologies that are open source on nanoHUB [6-8]. The models are the second most downloaded models on nanoHUB and used by researchers to test drive new technologies and examine the usability of new device options.


CitationResearch AreasDate
V. Petrov, D. Moltchanov, M. Komar, A. Antonov, P. Kustarev, S. Rakheja, and Y. Koucheryavy. "Terahertz Band Intra-Chip Communications: Can Wireless Links Scale Modern x86 CPUs?". Accepted for publication in IEEE ACCESS. doi: 10.1109/ACCESS.2017.2689077iii-nitride2017/04/11
K. Li, S. Rakheja. Optimal III-nitride HEMTs: From Materials and Device Design to Compact Model of the 2DEG Charge Density. In SPIE Proceedings: Gallium Nitride Materials and Devices XII, vol. 10104, p. 1010418-1 – 1010418-16, Feb. 2017.iii-nitride2017/02/01
S. Rakheja, P. Sengupta, K. Li. Challenges and Opportunities in Modeling Gallium Nitride High Electron Mobility Transistors – From Numerical Simulations to Compact Transistor Model. In International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, Oct. 02 07, 2016.iii-nitride2016/10/02
S. Rakheja and D. Antoniadis. MIT MVS Modelsiii-nitride2016/04/11
S. Rakheja and D.A. Antoniadis. Physics-based Compact Modeling of Charge Transport in Nanoscale Electronic Devices (invited). In IEEE Electron Devices Meeting (IEDM), Washington D.C., Dec. 07 – 12, 2015.iii-nitride2015/12/07
S.Rakheja, M. Lundstrom, and D. Antoniadis. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors – Part II: Experimental Verification. IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 2794–2801, Sep. 2015.iii-nitride2015/09/01
S.Rakheja, M.Lundstrom, and D.Antoniadis. An Improved Virtual-Source-Based Transport Model For Quasi-Ballistic Transistors – Part I: Capturing Effects of Carrier Degeneracy, Drain- Bias Dependence of Gate Capacitance, and Non-Linear Channel-Access Resistance. IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 2786–2793, Sep. 2015.iii-nitride2015/09/01
S. Rakheja, M. Lundstrom, and D.A. Antoniadis. A Physics-Based Compact Model for FETs from Diffusive to Ballistic Carrier Transport regimes. In IEEE Electron Devices Meeting (IEDM), San Francisco, California, Dec. 15 – 17, 2014.iii-nitride2014/12/15


PI: Dr. Shaloo Rakheja
PhD Student: Kexin Li